Method of manufacturing a semiconductor device, a semiconductor device, a semiconductor manufacturing device

A method of manufacturing a semiconductor device for forming a metal-element-containing layer in the recess is formed insulating layer, and forming a oxide layer mainly composed of an oxide of a metal element on an insulating layer including the concave portion, by annealing in a reducing atmosphere, and silicated the oxide layer, and having a step of forming a silicate layer mainly composed of silicate of a metal element, a.