D.C. conductivity of transparent conductive ZnO:Al films in the temperature range 80–360 K

An experimental study of the temperature dependence of the d.c. conductivity σ as a function of temperature T in the range from 80–360 K on nanocrystalline ZnO:Al films (Al3+ 2%) of thickness 500 nm prepared on glass microscope slides by a dip — coating method is presented. The electrical conductivity σ, which at room temperature varied between 0.1 to 2.7 S/cm, increased almost linearly with T for all the samples. Measurements of the Hall coefficient at room temperature and in a magnetic field of 1.2 T, gave RH=0.53 cm3C−1, from which a carrier concentration of n=1.18×1019 cm−3 and a carrier mobility of μ=1.40 cm2/Vs were deduced.