Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC

The role of a non-uniform p-base doping concentration in determining the electrical characteristics of a metal oxide semiconductor field effect transistor (MOSFET) in 4H-SiC is investigated. In particular, the device is dimensioned for low voltage ratings and its on-resistance (Ron) behavior is analyzed by means of numerical simulations. The results reveal that the proposed MOSFET shows in forward bias a high drain current, a low threshold voltage, and a low Ron if compared with previous literature data on similar device structures. This study would help in obtaining an improved performance for a low breakdown voltage 4H-SiC MOSFET which could turn useful, for example, as power optimizer in photovoltaic module-level applications.