600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure

A Super Junction (SJ) MOSFET with high aspect ratio p/n columns structure has been proposed to improve the trade-off relationship between breakdown voltage and specific on-resistance (R on )- We have proposed a new trench filling epitaxial growth technique to fabricate this structure. In this work, we tried to apply this method to 600 V-class SJ-MOSFETs. We succeeded in fabricating p/n columns structure of which the aspect ratio is 25. It shows that its R on is lower than that of IGBTs, and is the lowest in the reported 600 V-class Si devices.