Semiconductor device and method of manufacturing same

The invention provides a semiconductor device and a method of manufacturing the same. The semiconductor device is provided which includes a bottom electrode contact formed on a substrate, and a dielectric layer formed on the bottom electrode contact. The device further includes a heating element formed in the dielectric layer, wherein the heating element is disposed between two air gaps separating the heating element from the dielectric layer, and a phase change element formed on the heating element, wherein the phase change element includes a substantially amorphous background and an active region, the active region capable of changing phase between amorphous and crystalline. The invention can improve the heat insulation property of the phase change element and effectively decrease a reset curren that is required to form the phase of the active region to the amorphous state.