Low noise ion-implanted InP FET's

Ion-implanted one micron gate length InP FET's are described with noise figures as low as 3.5 dB at 12 GHz. This is the lowest published noise figure for InP FET's. The InP FET microwave performance data are compared with those of equivalent geometry GaAs FET's with either ion implanted or epitaxial channels. Microwave results indicate a definite gain advantage of InP FET's over these GaAs counterparts. Noise figures of both types of FET's are comparable but InP substrate improvement and implant profile optimization are suggested as a means of further reduction of the noise figure of InP FET's.