Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications

We demonstrate the manufacturable 22nm FD-SOI 40Mb embedded MRAM (eMRAM), by achieving product functionality and reliability at package level across industrial-grade operating temperature range (−40 to 125 °C) with ECC-off mode. The magnetic tunnel junction stack, integration and etch processes were optimized to achieve superior MTJ performances to meet all product requirements. From package level data, we confirmed the product reliability by passing LTOL, HTOL, 1M endurance cycling and 5x solder reflows tests with failure rate < 1 ppm. In addition, we demonstrate the eMRAM capability to cover stand-by magnetic immunity of ~ 600 Oe at 105 °C for 10 years and active-mode magnetic immunity of ~500 Oe.