Electrical properties and the structure changing of polycrystalline materials from the system Cu-As-Ge-S at high pressure

The results of experimental studies of magnetoresistance of polycrystalline materials (GeS)1-x(CuAsS2)x under high pressure (up to 50 GPa) are presented. The appearance of large negative magnetoresistance was found. The structure changing during applying high pressures was studied.