Semicondutor device and method of forming the same

Semiconductor device in accordance with embodiments of the present invention is interposed between a plurality of electrode patterns including, the isolation insulating them available sequentially on a substrate a plurality of electrode structures that are spaced horizontally, vertically passing through the plurality of electrodes the included block and the film information stored between the vertical blocks and the plurality of electrodes, wherein the vertical block is placed between the buried insulating pattern and the buried insulating pattern penetrating at least some of the plurality of electrodes spaced apart 1 includes a channel pattern and a second channel pattern, and each of the first and second channel patterns comprises a second surface in contact with the first surface and the embedded insulating pattern opposed to the data storage pattern.