A method for polishing a substrate, the polysilicon and at least one of silicon nitride

A method for chemical mechanical polishing a substrate, comprising: providing a substrate, wherein the substrate is polysilicon, and at least one of silicon oxide and silicon nitride comprises providing a chemical mechanical polishing composition comprising, as initial components: water, an abrasive and a acyclic Organosulfonsaureverbindung, wherein the acyclic Organosulfonsaureverbindung having an acyclic hydrophobic part having from 6 to 30 carbon atoms and a non-ionic acyclic hydrophilic portion having 10 to 300 carbon atoms, providing a chemical mechanical polishing pad having a polishing surface, moving the polishing surface relative to the substrate, applying the chemical mechanical polishing composition to the polishing surface and removing at least a portion of the substrate to polish the substrate, wherein at least a portion of the polysilicon from the substrate w ird and wherein at least a portion of one of silicon oxide and silicon nitride is removed from the substrate by the at least.