Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

Using transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at room temperature. Three levels located at E/sub v/ + 0.23 eV, E/sub v/ + 0.38 eV, and E/sub c/ - 0.27 eV consistently appear in various samples, showing they are characteristic defects in boron-doped silicon. Many properties of the E/sub v/ + 0.23 eV level and the divacancy are the same, according to the present study and others. We correlated the E/sub v/ + 0.38 eV level to the vacancy-oxygen-carbon complex recently identified by Lee and Corbett using the EPR technique. The E/sub c/ - 0.27 eV level could arise from an interstitial defect of oxygen and boron; and a new level at E/sub v/ + 0.30 eV arising upon its disappearance could be a vacancy defect trapping an oxygen atom and a boron. Several additional defect levels are reported.