Investigation of the trap-limited transient response of GaN HEMTs

Trap densities within the GaN HEMT structure limit the charge transport efficiency, thus impeding the device switching efficiency. This work studies and interprets the turn-on response of a GaN HEMT through transient TCAD simulations, impacted by traps in the AlGaN barrier, GaN buffer and at the AlGaN/GaN hetero-interface. Discussion into biasing factors for a chosen transient pulse that control these trap-induced delays is performed to identify the relative potential of each trap towards worsening of the current response.