A method for forming a borderless contact for transistors in a replacement metal gate process and such semiconductor transistor structure

A method, comprising: Forming an opening (311) in the interior of a dielectric layer (201), wherein the dielectric layer on top of a substrate (101) is formed and the opening a channel region (102) of a transistor (110) exposes in the substrate; Depositing a work function layer (401) lining the opening and covering the channel region; Forming a gate conductor (610) having a first portion (411) of the work function layer is covered, wherein the first portion of the work function layer is located on the upper side of the channel region; and Removing a second portion of the work function layer, wherein the second portion of the work function layer surrounding the first portion of the work function layer, wherein removing the second portion of the work function layer to the first portion of the work function layer to the remaining work function layer (412) is isolated.