Method for determining worst multi-carrier microdischarge state of microwave component

The invention discloses a method for determining the worst multi-carrier microdischarge state of a microwave component. The method comprises the steps of: firstly, allowing electrons to be equivalent to plasmas by placing the electrons at a sensitive part, where discharging is easy to occur, of the microwave component to be analyzed, determining an effective dielectric constant by the frequency of the plasmas, and obtaining electron density corresponding to the detectable variation of a port reflection coefficient by electromagnetic simulation or analytic calculation; and then, adopting a global optimization algorithm, using the vector of an initial phase combination as an optimization variable to obtain the changing curve along with time of the electron quantity when there are different phase combination multi-carrier signals, adopting the relative values of electron quantities of two adjacent envelop periods and microdischarge electron density in the single envelop period as criteria to obtain a microdischarge threshold value for each phase, and obtaining the phase combination which can stimulate microdischarge with the minimal single-way power, namely the worst multi-carrier microdischarge state, by population adjustment of the global optimization algorithm.