Application ofFIBCircuit EditandElectrical Characterization inFailure Analysis forInvisible Defect Issues

newconductor andinsulator layers. Withthese capabilities, Assemiconductor process technology rapidly develops into FIBcircuit editcanbeperformed inanyinterconnected deep-sub-micron ornanometer regime, thefeature sizeof level. Forexample, FIBcircuit edit wasperformed onan semiconductor devices continues toshrink down.Asaresult,sample atcontact level. First, athin oxide wasdeposited by thedefect being able tocause adevice malfunction isalso FIBasaninsulation layer. Then,several holes weredrilled becoming smaller andsmaller, andevencertain defect is foraccessing totherelated contacts ofthesuspected invisible withhigh-resolution SEM orTEM. Itmakes defective circuit. Finally, tungsten vias, lines andpadswere conventional physical failure analysis (PFA)faceagreat deposited forelectrical connection. Fig.1showedtheIonchallenge fordeep-sub-micron processed devices andthe beamimageof10padsdeposited foraccessing tothesix PFAsuccess rate decrease because ofsuchtiny orinvisible transistors ofatypical SRAM cell. defects. Thuselectrical failure analysis (EFA)isbecoming moreandmoreimportant. FIBcircuit editandelectrical characterization canprovide critical cluesofthefailure mechanism through diagnosing thebehaviour ofasuspected defective transistor evenifthedefect isinvisible withhighresolution SEMandTEM.Thispaper hasdemonstrated its application infailure analysis fortwocasesofinvisible defect issues.