MOCVD-grown AlGaN/GaN heterostructures with high electron mobility

Specific features of MOCVD growth of AlGaN/GaN heterostructures have been studied. In the structures obtained, the 2D electron gas in the channel had a density of 1.2×1013 cm−2 and a mobility of 1290 cm2/(V s) at room temperature. The effect of the purity of starting components on the properties of the structure is studied.