Stability of amorphous silicon alloy triple‐junction solar cells and modules

Results on reliability test for amorphous silicon alloy triple‐junction solar cells and modules are described. It has been found that, for a‐SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low‐temperature‐deposited microcrystalline p‐layer for each sub cell and of thinner i‐layers for the middle and the bottom cells improves stability of triple‐junction cells, by enhancing the electric field in the i‐layers.