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Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
2020
Shuya Kono
Marin Mori
Daichi Koretomo
Mamoru Furuta
Keywords:
Aluminum oxide
Materials science
Anodizing
Oxide
Thin-film transistor
Optoelectronics
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