Solid-state wideband GaN HEMT power amplifier with a novel negative feedback structure

The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which op- erates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from TriQuint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured re- sults show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz. The saturated output power is 38.5 dBm under DC bias of Vds D 28 V, Vgs D 3:5 V at the frequency of 5.5 GHz. that the transistor can be supplied by a single supply power. Fi- nally, an ultra-broadband power amplifier is designed and op- timized. The measured results show that the gain is more than 7 dB at a frequency of 3-6.5 GHz and that the output power is 38.5 dBm.