Interference filters using indium phosphide‐based epitaxial layers grown by metalorganic vapor phase epitaxy

Bandpass interference filters with center wavelengths between 1.3 and 1.7 μm have been made with InGaAsP/InP epitaxial layers grown by metalorganic vapor phase epitaxy. The transmission spectra measured exhibit a full width half maximum of 7 nm with peak rejections up to 20 dB and are in good agreement with the results obtained from theoretical modeling of the 81‐layer single half‐wave Fabry–Perot structure used. This indicates very good control of the composition and thickness of the layers grown, which is confirmed by transmission electron microscopy of the structure.