The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon

Abstract The steady state sputtering yield S and the useful degree of ionisation β + η of silicon have been measured as functions of primary ion energy, atomic number, incident angle, species (rare gas or oxygen), and oxygen partial pressure. The optimum bombardment conditions for SIMS analyses are discussed, and a comparison of the instrumental factor η for two SIMS instruments is made. Variation of both S and β + with oxygen surface coverage, as determined by using Auger electron spectroscopy, is given. A simple model is used to describe the mutual intensity changes occuring in the Auger spectrum during the bombardment-induced oxidation of silicon.