Synthesis of CdS nanowires by sulfurization

2002 
Semiconductor CdS nanowires have been fabricated by sulfurizing metal Cd that was electrodeposited in the nanochannels of porous anodic alumina template. The obtained CdS nanowires have been characterized using X-ray powder diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and X-ray energy dispersion analysis (EDAX), respectively. Investigation results demonstrate that large-scale polycrystalline CdS nanowires with hexagonal phase structure have been produced, having uniform diameters of about 50 nm and lengths up to tens of microns.
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