Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations

Abstract A high theoretical efficiency of 47.2% was achieved by a novel combination of In 0.51 Ga 0.49 P, GaAs, In 0.24 Ga 0.76 As and In 0.19 Ga 0.81 Sb subcell layers in a simulated quadruple junction solar cell under 1 sun concentration. The electronic bandgap of these materials are 1.9 eV, 1.42 eV, 1.08 eV and 0.55 eV respectively. This unique arrangement enables the cell absorb photons from ultraviolet to deep infrared wavelengths of the sunlight. Emitter and base thicknesses of the subcells and doping levels of the materials were optimized to maintain the same current in all the four junctions and to obtain the highest conversion efficiency. The short-circuit current density, open circuit voltage and fill factor of the solar cell are 14.7 mA/cm 2 , 3.38 V and 0.96 respectively. In our design, we considered 1 sun, AM 1.5 global solar spectrum.