Electron Raman scattering in semiconductor quantum wire in external magnetic field: Fröhlich interaction

Abstract The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Frohlich phonon interaction. To illustrate the theory we use a GaAs/Al 0.35 Ga 0.75 As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B 0 inside of the wire, and zero outside.