PNP pipe parasitized in Sige BiCMOS technique and manufacturing method thereof

The invention relates to the field of micro-electronics, in particular to a PNP pipe parasitized in Sige BiCMOS technique and a manufacturing method thereof. The pipe comprises a P-type substrate, wherein an N-type epitaxial layer is formed above the P-type substrate; an N-type buried layer is arranged between the epitaxial layer and the substrate and formed in a local area of the top part of the substrate and a local area of the bottom of the epitaxial layer; and a P-type well region far away from the buried layer is formed in the epitaxial layer. According to the device and the method, when the CMOS technique and HBT (NPN) technique proceed, the well region and an emitter region are opened on a parasitic lateral transistor simultaneously, so as to simplify the technological process; and meanwhile, the well region for forming the PNP pipe is separated from the buried layer, so as to improve the current amplification and the frequency characteristics of the PNP transistor, reduce the size of the PNP transistor, promote the manufacturing technique, and lower the manufacturing cost.