Investigation of SiC etch process in inductively coupled SF 6 /O 2 /Ar plasma

The plasma etching process of the SiC via hole fabrication is developed. In the course of the present work the correlation between etch rate and main process parameters, such as: pressure, RF power and gas flow was obtained. The final process shows the etching rate of more than 1000 nm/min during the etching process of the SiC substrate 100μm thick.