Dislocation motion and multiplication during the growth of silicon ribbon

Abstract The production and motion of dislocations during the growth of silicon ribbon by the dentritic web process is treated. Thermal elastic stresses are calculated from a temperature distribution defined along the growth direction of the ribbon. Dislocation motion and multiplication in the ribbon due to thermal stresses are monitored taking the ribbon crystallography into consideration and employing the Hassen-Sumino deformation model. The dislocation density and distribution obtained from the crystallographic considerations are compared with experimental observations of the defect configuration in silicon ribbon and similar computational results obtained assuming isotropic deformation conditions.