Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology

An n-ZnO/p-ZnO : Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal–organic chemical vapour deposition (MOCVD). The p-type ZnO layer with a hole concentration of 1.27 × 1017 cm−3 was fabricated using trimethylantimony (TMSb) as the Sb doping source. The current–voltage characteristics of the device exhibited a desirable rectifying behaviour with a turn-on voltage of 3.3 V. Distinct electroluminescence with ultraviolet and visible emissions was detected from this device under forward bias at room temperature. Moreover, metal–organic source TMSb is an effective and controllable dopant in the MOCVD technique, which is suitable for further industrialized production.