Research Progress in Preparation of Polycrystalline Silicon Thin Films by Aluminum Induced Crystallization

Aluminum induced crystallization(AIC) technique is received extensive attention,by which polycrystalline silicon(poly-Si) films with large grain sizes can be successfully prepared at low annealing temperature and short process time.The aluminum induced layer exchange mechanism is described and the influences of preparation conditions on the quality of poly-Si thin films during the AIC process are reviewed.More over,the research status in solar cell devices of poly-Si thin films prepared by AIC is discussed and the focus of future research that improving the quality of poly-Si thin-film seed layer prepared by AIC and epitaxial layer is given.