And a method of forming a phase change memory

A phase change memory and method of forming, wherein said method of forming a phase change memory comprising: providing a semiconductor substrate, a first dielectric layer located on a semiconductor substrate surface, the surface of the semiconductor substrate, the first dielectric layer the annular electrodes, on the electrode surface of the first dielectric layer is flush with the annular surface, and the first dielectric layer fills the inner annular electrode; forming overlying the first dielectric layer and second dielectric ring electrode layer; forming a first opening in said second dielectric layer on the electrode surface of the annular portion of the first opening is exposed; forming a phase change layer in the first opening. The method of forming a phase change memory of the present invention, the contact area of ​​the ring electrode and the phase change layer is smaller than the area of ​​the top surface of the ring electrode, the phase change memory low power operation.