Complete transient simulation of flash EEPROM devices

It has been demonstrated that the Fowler-Nordheim tunneling, hot electron injection, and band-to-band tunneling current models incorporated into the 2D device simulator HFIELDS have allowed an accurate simulation and analysis of the flash EEPROM cell during the transient writing cycles. These represent all the important physical mechanisms which occur during the writing of flash EEPROM devices. The physical models have been verified by comparison with flash EEPROM devices fabricated using a 1.0 mu m technology. >