A theory for the graded-gate FET

In the graded-gate FET (GFET), a high-resistance gate, with Ohmic end contacts, is biased to produce a longitudinal channel field. The gate voltage varies linearly along the gate. In this paper the authors develop a first-order theory to model the structure. The effects of a linearly varying gate voltage on the surface potential, the inversion layer and bulk charges, and the current-voltage characteristics for a single-drain GFET are predicted. The cases of positive, negative and zero voltage gradient are included for comparison.