Theoretical study on the transport property of p-Si∕n-SrTiO3−δ

The transport property of p-Si∕n-SrTiO3−δ heterojunction has been obtained self-consistently with the drift-diffusion model at the temperature range from 200to300K by applying Richardson current at the interface. The band structures, electric field intensities, and carrier distributions at various bias voltages or temperatures are obtained from our calculation. Furthermore, the evolution of the I-V behavior with the temperature is also obtained theoretically. From the good agreement between our calculated results and the experimental data, we can conclude that the rectification property in the perovskite-silicon p-n junction is owing to the drift-diffusion mechanism and the transport property of Si substrate significantly contributes to the almost linear characteristic of the I-V curves.