High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.