ACCURATE NONLINEARRESISTIVEFETMODELING FOR IMDCALCULATIONS

Thisworkdiscusses thenonlinear modeling procedures required forintermodulation distortion (IMD)calculations ofMESFETsbiased intheresistive (linear) region. Anautomatic full two-sided characterization ofIds(vgs, Vds) iscompared against thepreviously published extraction ofIds(vds) inthis problematic region. Itisshownthat this one-sided Taylor series extraction isinsufficient for mostapplications oftheFETinitstriode zone, andthus analternative method isproposed