DC CONTACT MODELING OF ELECTROSTATICALLY ACTUATED SWITCHES WITH LOW VOLTAGE

We have developed an original reverse engineering method for generating rough surfaces on ANSYS platform, by using the actual shape of the contact surface. We used this method to predict the real contact area between rough surfaces as a function of the applied force. The number of asperities in contact, their sizes and distribution allow us to discriminate the more appropriate electric contact model in diffusive and/or ballistic electron transport. The method is tested on RF MEMS switches with resistive contact and low actuation voltage. The simulated contact resistances are very close to the experimental resistance measurements and allow us to validate the numerical tool.