High power internally matched transistor of R&PC “Istok”

2008 
High power hermetically sealed, internally matched transistor for 3 cm wave length band applications with output power higher than 10 W, and associated gain higher than 13 dB, and efficiency higher than 30 % has been developed. Transistor is designed for continuous and pulse operation. Experimental results for 30 internally matched transistors are demonstrated.
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