Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides (ACS Nano (2021) 15:5 (8780−8789) DOI: 10.1021/acsnano.1c01220)

In the methods section, “Device Preparation and Measurement”, the caption of Figure 5 incorrectly stated, “An example of the gate voltage versus mobility for different chemical treatment steps.” This should instead state, “Example transfer curves showing the conductivity, σ, as a function of back gate, VG, for MoS2 devices after different treatments.” This is correctly described in the text referring to this figure, but the caption was mislabeled. The amended Figure 5 appears below. We apologize for the mistake in the original submission.