Gas Source Molecular Beam Epitaxy Grown InGaAs(P)N-InP Long-Wavelength ( m) Photodetectors Using a Solid Arsenic Source

cm for solid source As grown devices with the same cutoff wavelength of 1.85 m. The external quantum efficiency at a wavelength of 1.56 m is 30% for the solid source grown detector as compared with 16% for the gas source grown detector due to the higher background doping and hence smaller depletion region width in the latter diode. Nitrogen-hydrogen complex formation and local strain-induced defects may significantly contribute to high free carrier concentrations observed in gas source As grown InGaAs(P)N layers. Index Terms—Crystal growth, GSMBE, photodetectors, solid source As.