A semiconductor device with a solder layer and a tin-based method for manufacturing the same

A semiconductor device comprising: a semiconductor substrate (1); a support member (2); a solder layer based on tin (S); a first metal layer (M) and a first alloy layer (T1). The semiconductor substrate (1) is connected by the first metal layer (M), the first alloy layer (T1) and the solder layer based on tin (S) in this order with the support element (2). The first alloy layer (T1) of a first metal in the first metal layer (M) and tin in the solder layer based on tin (S) is formed. The first metal layer (M) is made of at least one selected from the group material consisting of titanium, aluminum, iron, molybdenum, chromium, vanadium, and an alloy of iron, nickel and chromium.