A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV

Abstract The formation and structure of buried SiO 2 layers formed by oxygen ion implantation into silicon at 150 keV have been studied by cross-sectional transmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS). The implanted oxygen dose was increased from 0.1 to 0.65 × 10 18 O + /cm 2 and the wafers were annealed for 5 hours at 1300° C. A dose of 0.45 × 10 18 O + /cm 2 was needed to produce a continuous buried oxide layer after annealing, even though a buried layer was not present in the as-implanted material. At this dose, no overlayer threading dislocations were visible by XTEM although small twins and stacking faults were present near the upper Si/SiO 2 interface. The type of defect being formed was found to depend on the morphology of the growing interface.