HfZrO x -Based Switchable Diode for Logic-in-Memory Applications

TiN/amorphous HfO x /ferroelectric-HfZrO x (HZO)/TiN was explored to accomplish switchable diode behavior with desirable memory characteristics in terms of high ${R}_{{\mathrm {HRS}}}/{R}_{{\mathrm {LRS}}}$ ratio of ~2600 and retention up to ten years at 25 °C. The bias-controlled direction of the built-in diode was studied to be dominated by the polarization of HfZrO x while good retention can be achieved by stacking HfO x which is beneficial to suppress leakage current. More importantly, 16 Boolean functions can be realized in a single device which is easier to implement multiplier and adder. The prominent nonvolatile memory and computation performance make it a promising device for logic-in-memory (LiM) applications. Besides electrical properties, it well outperforms other LiM devices due to simple structure and fab-friendly materials, inspiring a new approach to capitalize on the salient features of ferroelectric HZO for LiM applications.