A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences

In this work the effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of unirradiated and irradiated diodes up to 6.3×10 15 n eq /cm 2 have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation.