Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

Masanori Tsukuda,Masaki Sudo,Kazunori Hasegawa,Seiya Abe,Takuya Saraya,Toshihiko Takakura,Munetoshi Fukui,Kazuo Itou,Shinichi Suzuki,Kiyoshi Takeuchi,Tamotsu Ninomiya,Toshiro Hiramoto,Ichiro Omura

Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT

2019

Masanori Tsukuda
Masaki Sudo
Kazunori Hasegawa
Seiya Abe
Takuya Saraya
Toshihiko Takakura
Munetoshi Fukui
Kazuo Itou
Shinichi Suzuki
Kiyoshi Takeuchi
Tamotsu Ninomiya
Toshiro Hiramoto
Ichiro Omura

Negative biasing of the gate voltage in a scaled insulated gate bipolar transistor (IGBT) during the off-state was modeled and found to be effective against self-turn-on failures. The required self-turn-on-free criteria were verified experimentally.

Keywords:

Engineering
Electrical engineering
Insulated-gate bipolar transistor
gate voltage
Biasing

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