GaNAs resonant-cavity avalanche photodiode operating at 1.064 μm

A resonant-cavity avalanche photodiode using a GaNAs absorption region grown on GaAs has been demonstrated. The peak quantum efficiency was 59% at 1.064 μm with a full width at half maximum of 11 nm. The absorption coefficient was determined to be α=9×103/cm at this wavelength. The devices exhibited gain up to 100 at a low breakdown voltage of 13 V.