Dry plasma etching system and method for III-V family compounds

The present invention belongs to semiconductor producing equipment and technology. The dry etching system consists of measuring unit, RF bias power source, substrate stage, ICP coupling antenna, magnetically controlling coil, RF power source, reactor, pedestal, gas distributor and vacuum unit connected together. The dry etching process includes: producing plasma; bombarding the surface of substrate with plasma guided and bounded by externally applied RF bias power or magnetic field; composing the etching gas mixture; and etching. The said system and process can produce fine pattern and has noeffect on the semiconductor performance and service life.