Preparation of Ge quantum crystallites embedded in a-SiNx matrix by the PECVD method

Abstract Preparation of Ge quantum crystallites embedded in a-SiN x matrix was successfully achieved by the PECVD technique and followed thermal annealing treatment at 800°C. The microscopic heterogeneity of the as-deposited and thermal-annealed films were analyzed by the TEM and X-ray diffraction. We have found that substrate temperature is a critical parameter for the formation of Ge clusters. The temperature and time duration of annealing determine the size of Ge quantum crystallites. We are temporarily using the diffusion-limited growth model to explain the crystallization mechanism of this quantum material.