Design,characterization and fabrication of an In0.53Ga0.47As planar Gunn diode operating at millimeter waves

This paper describes the design, characterization and fabrication of a planar In0.53Ga0.47 As based planar Gunn diode on an In P semi-insulating substrate. The planar Gunn diode was designed in Coplanar Waveguide(CPW) format with an active channel length and width of 4 μm and 120 μm respectively, and modeled using the Advanced Design System(ADS-2009) simulation package. The initial experimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF output power of-6.6 d Bm, which is the highest recorded power for an In P based planar Gunn diode.