Operation of a resistive-gate MESFET oscillator in the single-domain transit-time mode

Resistive-gate (RG) MESFET oscillators having gate sheet resistance of 30 k Omega /sq are operated in the single-domain transit-time mode. Frequencies from 6 to 28 GHz are observed, inversely proportional to channel length. Unlike a lateral Gunn diode, operation is essentially independent of drain-to-source voltage, indicating that channel conditions are controlled by the potential drop along the resistive gate. The authors conclude that contiguous domains cannot form in the channel unless the gate sheet resistance is reduced to about 3 k Omega /sq. >