Narrowband ultraviolet field-emission device using Gd-doped AlN

We developed mercury-free narrow-band deep-ultraviolet luminescence devices which were accomplished by performing field-emission excitation of Al1−xGdxN. The narrow band emission is a typical feature of the intra-orbital electron transition in the rare-earth Gd3+ ions. AlN, GdN and Al1−xGdxN thin films were grown on fused silica substrates by using the reactive sputtering technique. A resolution limited, narrow band luminescence line from Gd3+ ions has been observed around 315 nm. Detailed luminescence characteristics depending on the GdN mole fraction and the growth temperature have been investigated.